World class AlN / AlGaN epitaxial template
He is good at epitaxial growth of AlN and AlGaN with Al content higher than 0.4 and n-type doping due to the ten years of high temperature MOCVD epitaxial growth
AlN template
2 inch, XRC (002 / 102) ≤ & nbsp; 80 / 400 arcsec, thickness uniformity (5%), AFM RMS (< 1nm), thickness adjustable 1 ~ 3um
AlGaN template
In situ growth of Al based on high quality AlN templatexGa1-xN template, Al component 0.4 ~ 1 adjustable, n-type doping activation concentration ≥ 3e18 cm-3
| Product model | Product category | Product pictures | Crystal quality (002) | Crystal quality (102) | Epitaxial thickness | Surface roughness | Marginal deduction | Specification |
|---|---|---|---|---|---|---|---|---|
| WAlN-SA400 | Sapphire / AlN epitaxial wafer / template |  |
≤ 80 arcsec | ≤ 400 arcsec | 2~3 μm | ≤ 1 nm | ≤ 3 mm |
|
| WAlN-NS400 | NPSs / AlN epitaxial wafer / template | |
≤ 200 arcsec | ≤ 200 arcsec | ≥ 5 μm | ≤ 1 nm | ≤ 3 mm |
|
| WAlN-SC001 | SiC / AlN epitaxial wafer / template |  |
50~5000 nm |
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| WAGN-AN001 | AlGaN epitaxial wafer / template | |
≤ 300 arcsec | ≤ 500 arcsec | 1~2 μm | ≤ 2 nm | ≤ 3 mm |
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